創見 DDR333 512MB 三菱-Good!
 

創見 DDR333 512MB 三菱 顆粒 測試:

磐英 8K9AI 之 BIOS 設定如下:

System Performance- Ultra (Turbo)
DRAM CAS Latency- 2
Bank Interleave- 4 Bank (2 Bank)
Precharge to Active(Trp)- 2T (3T)
Tras Non-DDR400/DDR400- 5T/6T (6T/8T)
Active to CMD(Trcd)- 3T (2T)
DRAM Burst Length- 4 (8)
DRAM Queue Depth- 4 level (2 level,3 level)
DRAM Command Rate- 1T Command (2T Command)
Write Recovery Time- 2T (3T)
tWTR for DDR400 only- 1T (2T,3T)
DCLKI Timing- 0.5ns (1.0ns)
DCLKO Timing- 0.5ns (1.0ns)

經 R,S,T 測試通過:

2.5V - DDR 333 OK!

2.7V - DDR 400 OK!

唯一的疑問是 Active to CMD(Trcd)- 3T 即使是 DDR 333 也無法選 2T (Why?)

上述 BIOS 設定對吧?還可以再選()內的數字做最佳化嗎?

回覆: 創見 DDR333 512MB 三菱-Good!
 

Active to CMD(Trcd) 為何???